transistor (npn) features z low collector-emitter saturation voltage v ce(sat) z satisfactory operation performances at high efficiency with the low voltage power supply. maximum ratings (t a =25 unless otherwise noted) electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =10 a, i c =0 7 v collector cut-off current i cbo v cb =10v, i e =0 0.1 a emitter cut-off current i ebo v eb =6v, i c =0 0.1 a h fe(1) v ce =2v, i c =500ma 230 600 dc current gain h fe(2) v ce =2v, i c =2a 150 collector-emitter saturation voltage v ce(sat) i c =3a, i b =0.1a 1 v transition frequency f t v ce =6v, i c =50ma, f=200mhz 150 mhz collector output capacitance c ob v cb =20v, f=1mhz 50 pf classification of h fe(1) rank q r range 230-380 340-600 marking tq tr symbol parameter value units v cbo collector- base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 7 v i c collector current -continuous 3 a p c collector dissipation 500 mw t j junction temperature 150 t stg storage temperature -55-150 sot-89 1. base 2. collector 3. emitter 1 2 3 2SD1119 1 www.htsemi.com semiconductor jinyu
2 www.htsemi.com semiconductor jinyu 2SD1119
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